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Datasheet STUNXXX Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | STUNxxx | SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
STUN06I - STUN5D0
VBR : 6.8 - 200 Volts PPK : 1500 Watts
FEATURES :
* 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V * Pb / RoHS |  EIC discrete Semiconductors | tvs-diode |
STU Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | STU03L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor Green Product
STU03L01 STD03L01
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
2A
R DS(ON) ( Ω) Max
0.9 @ VGS=10V 1.1 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable.  SamHop Microelectronics transistor | | |
| 2 | STU03L07 | N-Channel Logic Level Enhancement Mode Field Effect Transistor Green Product
STU03L07 STD03L07
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
70V
ID
9A
R DS(ON) (m Ω) Max
228 @ VGS=10V 267 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SamHop Microelectronics transistor | | |
| 3 | STU03N20 | N-Channel Logic Level Enhancement Mode Field Effect Transistor STU03N20
Sa mHop Microelectronics C orp.
STD03N20Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
200V
3.28 @ VGS=10V 2A
3.59 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO SamHop Microelectronics transistor | | |
| 4 | STU04N20 | N-Channel Logic Level Enhancement Mode Field Effect Transistor Green Product
STU/D04N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
200V
ID
4A
R DS(ON) ( Ω) Typ
1.4 @ VGS=10V 1.6 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 SamHop Microelectronics transistor | | |
| 5 | STU06L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor Green Product
STU06L01 STD06L01
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
6A
R DS(ON) (m Ω) Max
353 @ VGS=10V 553 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SamHop Microelectronics transistor | | |
| 6 | STU09N25 | N-Channel Enhancement Mode Field Effect Transistor Green Product
STU09N25 STD09N25
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
250V
ID
7.5A
R DS(ON) ( Ω) Max
0.4 @ VGS=10V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package SamHop Microelectronics transistor | | |
| 7 | STU100N3LF3 | N-channel Power MOSFET
STD100N3LF3 STU100N3LF3
N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ II Power MOSFET
General features
Type STD100N3LF3 STU100N3LF3 VDSSS 30 V 30 V RDS(on) ID Pw
3 1
2 1
<0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W
3
1. Current limited by package ■  ST Microelectronics mosfet | | |
| 8 | STU102S | N-Channel Logic Level Enhancement Mode Field Effect Transistor STU102S
SamHop Microelectronics Corp.
STD102SGreen
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
566 @ VGS=10V
100V
6A
734 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-2 SamHop Microelectronics transistor | | |
| 9 | STU1030PL | P-Channel Enhancement Mode MOSFET S amHop Microelectronics C orp.
h P -C hannel E S nhancement Mode MOS FE T a t a P R ODUC T S UMMAR Y D . R V w w I w
DS S D
t e e
4U
m o .c
S T U/D1030P L
P reliminary May.28 2004
F E AT UR E S
DS (ON) ( m W ) Max
S uper high dense cell design for low R DS (ON ).
-30V
-18A
55 @ V G S = - SamHop Microelectronics mosfet | |
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