|
|
PDF MRF899 Data sheet ( Hoja de datos )
| Número de pieza | MRF899 | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF899 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF899/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 26 Volt UHF large–signal, common emitter, Class AB linear
amplifier applications in industrial and commercial FM / AM equipment operating
in the range 800 – 960 MHz.
• Specified 26 Volt, 900 MHz Characteristics
Output Power = 150 Watts (PEP)
Minimum Gain = 8.0 dB @ 900 MHz, Class AB
Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)
Maximum Intermodulation Distortion – 28 dBc @ 150 Watts (PEP)
• Characterized with Series Equivalent Large–Signal Parameters from 800
to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF899
150 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 375A–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
(1) For information only. This part is collector matched.
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
hFE
Cob
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
28
60
4.0
—
30
—
Value
28
60
4.0
25
230
1.33
– 65 to + 150
Max
0.75
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ Max Unit
37 — Vdc
85 — Vdc
4.9 — Vdc
— 10 mAdc
75 120 —
75 — pF
(continued)
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
DataSheet4 U .com
www.DataSheet4U.com
MRF899
1
www.DataSheet4U.com
1 page  
www.DataSheet4U.com
C27
C26
C5 C10
C17 C12 C14
COAX 1
C7
L4 R2
C3
B2
L2
Q1
L6 R4
C20
C22
L7
BALUN 2
L1
BALUN 1
C1
C2
L3
B1
C4
R3
L5
C9
C16
C19
L9
C23
C21
R5
L8
C24
C25
COAX 2
C11 C6 C8
C18 C13 C15
Figure 9. MRF899 Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
DataSheet4 U .com
www.DataSheet4U.com
MRF899
5
www.DataSheet4U.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MRF899.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF890 | NPN SILICON RF POWER TRANSISTOR |  Advanced Semiconductor |
| MRF891 | RF POWER TRANSISTORS NPN SILICON | Motorola Semiconductors |
| MRF891S | RF POWER TRANSISTORS NPN SILICON | Motorola Semiconductors |
| MRF892 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |