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PDF SS115 Data sheet ( Hoja de datos )

Número de pieza SS115
Descripción Surface Mount Schottky Barrier Rectifiers
Fabricantes ETC 
Logotipo ETC Logotipo



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SS115
1.0 AMP. Surface Mount Schottky Barrier Rectifiers
Features
a For surface mounted application
a Metal to silicon rectifier, majority carrier conduction
a Low forward voltage drop
a Easy pick and place
a High surge current capability
a Plastic material used carriers Underwriters
Laboratory Classification 94V-O
a Epitaxial construction
a High temperature soldering:
260oC/ 10 seconds at terminals
Mechanical Data
a Case: Molded plastic
a Terminals: Solder plated
a Polarity: Indicated by cathode band
a Packaging: 12mm tape per EIA STD RS-481
a Weight: 0.064 gram
Voltage Range
150 Volts
Current
1.0 Ampere
SMA/DO-214AC
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.091(2.30)
.078(1.99)
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25+ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
SS115
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
150
Maximum RMS Voltage
VRMS
105
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TL (See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
VDC
I(AV)
IFSM
150
1.0
30
Maximum Instantaneous Forward Voltage
(Note 1)
@ 25OC 1.0A
@ 125OC 1.0A
@ 25OC 2.0A
@ 125OC 2.0A
VF
0.82
0.67
0.89
0.75
Maximum DC Reverse Current @ TA =25+ at
Rated DC Blocking Voltage @ TA=125+
IR
0.05
0.5
Typical Junction Capacitance (Note 3)
Cj
50
Typical Thermal Resistance ( Note 2 )
R JL
20
Operating Temperature Range
TJ -65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2 x 0.2”(5.0 x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C
V
V
V
A
A
V
mA
mA
pF
+/W
+
+
- 908 -

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