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PDF 2SK3992 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3992 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3992
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3992 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3992
2SK3992-ZK
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 32 A)
• Low Ciss: Ciss = 2900 pF TYP.
• 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±64
±256
Total Power Dissipation (TC = 25°C)
PT1 38
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 33
EAS 109
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17321EJ1V0DS00 (1st edition)
Date Published February 2005 NS CP(K)
Printed in Japan
2004
1 page  
2SK3992
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = 5.0 V
6
4 10 V
2
0
-100
ID = 32 A
Pulsed
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
SWITCHING CHARACTERISTICS
100
tf
td(off)
10
VDD = 12.5 V
VGS = 10 V
RG = 10 Ω
1
0.1 1
tr
td(on)
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10 0 V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
Coss
Crss
100
0.01
0.1 1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
ID = 64 A
(VDD = 5.0 V at ID = 48 A)
25
VDD = 20 V
12.5 V
20 5.0 V
12
10
8
15 6
VGS
10 4
5
VDS
2
00
0 10 20 30 40 50 60
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/µs
VGS = 0 V
10
1
10
IF - Diode Forward Current - A
100
Data Sheet D17321EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3992.PDF ] | |
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