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PDF TPC8207 Data sheet ( Hoja de datos )
| Número de pieza | TPC8207 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8207
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC8207
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
20
20
±12
6
24
1.5
1.1
0.75
0.45
46.8
6
0.1
150
−55~150
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.08 g (typ.)
Circuit Configuration
8765
1234
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2004-07-06
1 page  
RDS (ON) – Ta
50
Common source
Pulse test
40
VGS = 2.5 V VGS = 2 V
30 ID = 6 A
1.5A, 3A
20
10
ID = 1.5 A, 3A, 6A
VGS = 4 V
ID = 1.5A, 3 A, 6A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8207
IDR – VDS
100
5, 10
10 3
1
VGS = 0 V
1
0.1
−0
−0.2
−0.4
−0.6
Common source
Ta = 25°C
Pulse test
−0.8 −1 −1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
100
10
0.1
Ciss
Coss
Crss
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
1 10 100
Drain-source voltage VDS (V)
Vth – Ta
1.4
Common source
1.2 VDS = 10 V
ID = 200 µA
Pulse test
1.0
0.8
0.6
0.4
0.2
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
2.0
(1)
1.5
(2)
1.0
(3)
PD – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0.5 (4)
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
16 VDS
8
8V
12 6
4 V VDD = 16 V
84
Common source
ID = 6 A
4
Ta = 25°C
2
VGS
Pulse test
00
0 8 16 24 32
Total gate charge Qg (nC)
5 2004-07-06
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8207.PDF ] | |
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