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Datasheet MTY10N100E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MTY10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY10N100E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY10N100E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provi |  Motorola Semiconductors | data |
MTY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MTY100N10E | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY100N10E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY100N10E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in Motorola Semiconductors data | | |
| 2 | MTY10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY10N100E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY10N100E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provi Motorola Semiconductors data | | |
| 3 | MTY14N100E | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY14N100E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY14N100E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in Motorola Semiconductors data | | |
| 4 | MTY14N100E | Power Field Effect Transistor MTY14N100E
TMOS E−FET.™ Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery  ON Semiconductor transistor | | |
| 5 | MTY16N80E | TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY16N80E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY16N80E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide Motorola Semiconductors data | | |
| 6 | MTY16N80E | Power Field Effect Transistor MTY16N80E
Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this ad ON Semiconductor transistor | | |
| 7 | MTY20N50E | Power MOSFET, Transistor MTY20N50E
Preferred Device
Power MOSFET 20 Amps, 500 Volts
N−Channel TO−264
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand hig ON Semiconductor mosfet | |
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