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PDF 2SK3418 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3418 | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3418 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SK3418
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 4.3 m typ.
• 4 V gate drive device
• High speed switching
Outline
TO-220AB
D
G
S
ADE-208-941 (Z)
1st. Edition
Mar. 2001
1
2
3
1. Gate
2. Drain (Flange)
3. Source
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
I D = 50 A
0.2
0.1 20 A
10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
2SK3418
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4 V
3 10 V
1
0.3
0.1
1 3 10 30 100 300 1000
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12 I D = 50 A
8 4V
10, 20 A
4
10, 20, 50 A
VGS = 10 V
0
–50 0
50 100 150 200
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
500
V DS = 10 V
200 Pulse
100
50 Tc = –25°C
20
10
5
2
1
0.5
0.1
25°C
75°C
0.3 1 3 10 30
Drain Current ID (A)
100
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SK3418.PDF ] | |
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