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PDF MRF654 Data sheet ( Hoja de datos )
| Número de pieza | MRF654 | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF654 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 15 W
Minimum Gain = 7.8 dB
Efficiency = 55%
• Built–In Matching Network for Broadband Operation
• Gold Metallized, Emitter Ballasted for Long Life and Reliability
• Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply Voltage
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF654/D
MRF654
15 W, 470 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector–Cutoff Current
(VCE = 15 Vdc, VBE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
16
36
4.0
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 244–04, STYLE 1
Value
16
36
4.0
4.0
44
0.25
– 65 to +150
Max
4.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 2.0 mAdc
(continued)
MRF654
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRF654.PDF ] | |
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