Datasheet DIM400LSS17 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	DIM400LSS17-A000	Single Switch IGBT Module DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue February 2002, version DS5497-2.0 DS5497-3.0 March 2002 FEATURES s s s 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 40	Dynex	igbt

DIM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	DIM100	SIMM/DIMM SOCKET DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com DIM100	AUK Contractors	data
2	DIM100PHM33-A000	IGBT Power Module DIM100PHM33-A000 DIM100PHM33-A000 Half Bridge IGBT Module PDS5708-1.3 January 2004 FEATURES I I I I KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.4V 100A 200A 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolate	Dynex Semiconductor	igbt
3	DIM100PHM33-F000	IGBT Power Module DIM100PHM33-F000 DIM100PHM33-F000 Half Bridge IGBT Module PDS5764-1.1 April 2004 FEATURES I I I I KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 2.8V 100A 200A Soft Punch Through Silicon 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates Hi	Dynex Semiconductor	igbt
4	DIM100WHS12-A000	IGBT Power Module DIM100WHS12-A000 DIM100WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5735-1.0 DS5735-2.0 May 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max)	Dynex Semiconductor	igbt
5	DIM100WHS12-E000	IGBT Power Module DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 1.7V	Dynex Semiconductor	igbt
6	DIM100WHS17-A000	IGBT Power Module DIM100WHS17-A000 DIM100WHS17-A000 Half Bridge IGBT Module PDS5715-1.1 Febuary 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 100A 200A *(measured a	Dynex Semiconductor	igbt
7	DIM100WHS17-E000	IGBT Power Module DIM100WHS17-E000 DIM100WHS17-E000 Half Bridge IGBT Module PDS5719-1.2 February 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1700V 2.0	Dynex Semiconductor	igbt
8	DIM1200ASM45-TL000	Single Switch IGBT Module Preliminary Information Data DIM1200ASM45-TL000 Single Switch IGBT Module D6158S-1 September 2014 (LN31981) FEATURES  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base With AlN Substrates KEY PARAMETERS VCES VCE	Dynex	igbt
9	DIM1200ASM45-TL001	Single Switch IGBT Module Data Replaces DS6169-1 Preliminary Information DIM1200ASM45-TL001 Single Switch IGBT Module DS6169-2 August 2015 (LN32854) FEATURES  10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base With AlN	Dynex	igbt

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Número de pieza	Descripción	Fabricantes	PDF
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