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PDF NTE578 Data sheet ( Hoja de datos )
| Número de pieza | NTE578 | |
| Descripción | Silicon Rectifier Schottky Barrier / General Purpose | |
| Fabricantes | NTE Electronics | |
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Hay una vista previa y un enlace de descarga de NTE578 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE578
Silicon Rectifier
Schottky Barrier, General Purpose
Description:
The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide
passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–fre-
quency inverters, free wheeling diodes, and polarity protection diodes.
Features:
D Low Reverse Current
D Low Stored Charge, Majority Carrier Conduction
D Low Power Loss/High Efficiency
D Highly Stable Oxide Passivated Junction
D Guard–Ring for Stress Protection
D Low Forward Voltage
D 150°C Operating Junction Temperature
D High Surge Capacity
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Average Rectified Forward Current, IO
(VR (equiv) ≤ 0.2VR(dc), RθJA = 50°C/W, P.C. Board Mounting, TA = +120°C) . . . . . . . . . 1A
Nonrepetitive Peak Surge Current, IFSM
(Surge applied at rated load conditions, half–wave single phase, 60Hz) . . . . . . . . . . . . . 25A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Voltage Rate of Change (Rated VR), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Electrical Characteristics: (TL = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions
Min Typ Max Unit
Maximum Instanteous Forward Voltage
Maximum Instanteous Reverse Current
VF IF = 1A, Note 1
–
IR VR = 90V, TL = +25°C
–
VR = 90V, TL = +100°C –
– 0.6 V
– 0.5 mA
– 5.0 mA
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE578.PDF ] | |
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