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PDF MMBT3906L Data sheet ( Hoja de datos )
| Número de pieza | MMBT3906L | |
| Descripción | General Purpose Transistor | |
| Fabricantes | ON | |
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MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
ICM
Value
−40
−40
−5.0
−200
−800
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2A M G
G
1
2A = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping†
MMBT3906LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT3906LT3G
SMMBT3906LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
3,000 / Tape &
Reel
SMMBT3906LT3G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 11
1
Publication Order Number:
MMBT3906LT1/D
1 page  
1000
TJ = 150°C
25°C
- 55°C
100
MMBT3906L, SMMBT3906L
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V
10
1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
1.0
0.8
IC = 1.0 mA
0.6
0.4
10 mA
30 mA
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1000
TJ = 25°C
100 mA
2.0 3.0
5.0 7.0 10
http://onsemi.com
5
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| PDF Descargar | [ Datasheet MMBT3906L.PDF ] | |
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