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PDF MJW21196 Data sheet ( Hoja de datos )
| Número de pieza | MJW21196 | |
| Descripción | Silicon Power Transistors | |
| Fabricantes | ON | |
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MJW21195 (PNP)
MJW21196 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
• Total Harmonic Distortion Characterized
• High DC Current Gain –
hFE = 20 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current – Continuous
Collector Current – Peak (Note 1)
VCEO
VCBO
VEBO
VCEX
IC
Base Current – Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
IB
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction to Case
RθJC
Thermal Resistance,
Junction to Ambient
RθJA
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Value
250
400
5.0
400
16
30
5.0
200
1.43
–ā65 to
+150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Max Unit
0.7 °C/W
40 °C/W
http://onsemi.com
16 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
200 WATTS
1
2
3
TO–247
CASE 340K
STYLE 3
MARKING DIAGRAM
MJW
2119x
LLYWW
1 BASE
3 EMITTER
2 COLLECTOR
MJW2119x = Device Code
x = 5 or 6
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJW21195
TO–247
30 Units/Rail
MJW21196
TO–247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 1
1
Publication Order Number:
MJW21195/D
1 page  
MJW21195 (PNP) MJW21196 (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
TYPICAL CHARACTERISTICS
PNP MJW21195
100
NPN MJW21196
100
10 ms
10 ms
10
100 ms
10
100 ms
1 Sec
1 Sec
11
0.1
1
10 100 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
0.1
1
10 100 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 14. Active Region Safe Operating Area
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MJW21196.PDF ] | |
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