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PDF MJE4343 Data sheet ( Hoja de datos )
| Número de pieza | MJE4343 | |
| Descripción | POWER TRANSISTORS COMPLEMENTARY SILICON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High-Voltage Ċ High Power
Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector–Emitter Sustaining Voltage —
NPN
PNP
VCEO(sus) = 160 Vdc — MJE4343 MJE4353
• High DC Current Gain — @ IC = 8.0 Adc
hFE = 35 (Typ)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv w(1) Pulse Test: Pulse Width 5.0 µs, Duty Cycle 10%.
Max
160
160
7.0
16
20
5.0
125
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
_C
Max Unit
1.0 _C/W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
Reference: Ambient Temperature
Order this document
by MJE4343/D
NPN
MJE4343
PNP
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
CASE 340D–02
TO–218 TYPE
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
1
1 page  
PACKAGE DIMENSIONS
MJE4343 MJE4353
C
B QE
U
SL
4
K 1 23
A
V
G
DJ
H
CASE 340D–02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
A ––– 20.35
B 14.70 15.20
C 4.70 4.90
D 1.10 1.30
E 1.17 1.37
G 5.40 5.55
H 2.00 3.00
J 0.50 0.78
K 31.00 REF
L ––– 16.20
Q 4.00 4.10
S 17.80 18.20
U 4.00 REF
V 1.75 REF
INCHES
MIN MAX
––– 0.801
0.579 0.598
0.185 0.193
0.043 0.051
0.046 0.054
0.213 0.219
0.079 0.118
0.020 0.031
1.220 REF
––– 0.638
0.158 0.161
0.701 0.717
0.157 REF
0.069
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJE4343.PDF ] | |
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