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PDF MJE18009 Data sheet ( Hoja de datos )
| Número de pieza | MJE18009 | |
| Descripción | Power Transistor | |
| Fabricantes | ON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
SWITCHMODE™ NPN Silicon
Planar Power Transistor
The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light
ballast”). These high voltage/high speed transistors exhibit the following main
features:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Specified Dynamic Saturation Data
• Two Package Choices: Standard TO–220 or Isolated TO–220
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
VCEO
VCES
VCBO
VEBO
IC
ICM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
IB
IBM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Total Device Dissipation @ TC = 25°C
*Derate above 25_C
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1s, 25°C, Humidity ≤ 30%)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTC = 25°C
Per Figure 22
Per Figure 23
Per Figure 24
TJ, Tstg
VISOL1
VISOL2
VISOL3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
MJE18009 MJF18009
450
1000
1000
9
10
20
4
8
150 50
1.2 0.4
– 65 to 150
4500
3500
1500
MJE18009 MJF18009
0.83 2.5
62.5 62.5
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
V
Unit
_C/W
_C
(2) Proper strike and creepage distance must be provided.
Order this document
by MJE18009/D
MJE18009
MJF18009
POWER TRANSISTORS
10 AMPERES
1000 VOLTS
50 and 150 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
2
IBoff = IC/2
VCC = 300 V
PW = 20 µs
1 IC/IB = 10
TYPICAL SWITCHING CHARACTERISTICS
TJ = 125°C
TJ = 25°C
5
4
3
2
MJE18009 MJF18009
IC/IB = 5
IBoff = IC/2
VCC = 300 V
PW = 20 µs
IC/IB = 10
0
14
IC/IB = 5
7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, ton
1
TJ = 125°C
0 TJ = 25°C
14
7
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Resistive Switching, toff
5
IBoff = IC/2
4
IC/IB = 5
VCC = 15 V
VZ = 300 V
LC = 200 µH
3
2
1
TJ = 125°C
TJ = 25°C
IC/IB = 10
0
123 4 5 6 78
IC, COLLECTOR CURRENT (AMPS)
9 10
Figure 9. Inductive Storage Time, tsi
6
TJ = 125°C
IBoff = IC/2
5
TJ = 25°C
VCC = 15 V
VZ = 300 V
LC = 200 µH
4
IC = 3 A
3
2
1
IC = 6.5 A
0
35
7 9 11
hFE, FORCED GAIN
13
Figure 10. Inductive Storage Time
15
350
300
250 IBoff = IC/2
VCC = 15 V
VZ = 300 V
200 LC = 200 µH
tc
TJ = 125°C
TJ = 25°C
150
100
1
tfi
3 57 9
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching,
tc & tfi @ IC/IB = 5
11
Motorola Bipolar Power Transistor Device Data
300
IBoff = IC/2
VCC = 15 V
tc
VZ = 300 V
LC = 200 µH
200
100 tfi
0
12
TJ = 125°C
TJ = 25°C
3 45 67 8
IC, COLLECTOR CURRENT (AMPS)
9 10
Figure 12. Inductive Switching,
tc & tfi @ IC/IB = 10
5
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