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PDF MJE18008 Data sheet ( Hoja de datos )
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18008/D
™Designer's Data Sheet
SWITCHMODE™
MJE18008 *
MJF18008 *
NPN Bipolar Power Transistor
*Motorola Preferred Device
For Switching Power Supply Applications
POWER TRANSISTOR
The MJE/MJF18008 have an applications specific state–of–the–art die designed
for use in 220 V line–operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Tight Parametric Distributions are Consistent Lot–to–Lot
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Two Package Choices: Standard TO–220 or Isolated TO–220
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol MJE18008 MJF18008 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%, Test No. 1 Per Fig. 22b
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTC = 25_C)
Test No. 1 Per Fig. 22c
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
(TC = 25°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Rating
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
PD
TJ, Tstg
Symbol
450
1000
9.0
8.0
16
4.0
8.0
— 4500
— 3500
— 1500
125 45
1.0 0.36
– 65 to 150
MJE18008 MJF18008
Vdc
Vdc
Vdc
Adc
Adc
Volts
Watts
W/_C
_C
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance — Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8″ from Case for 5 Seconds
RθJC
RθJA
TL
1.0 2.78
62.5 62.5
260
_C/W
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Rated VCES, VEB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 800 V, VEB = 0)
(TC = 125_C)
(TC = 125_C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
VCEO(sus)
ICEO
ICES
IEBO
450
—
—
—
—
—
CASE 221A–06
TO–220AB
MJE18008
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF18008
Typ Max Unit
— — Vdc
— 100 µAdc
— 100 µAdc
— 500
— 100
— 100 µAdc
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
MJE18008 MJF18008
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
160
150
IB(off) = IC/2
VCC = 15 V
140 IC = 2 A VZ = 300 V
130 LC = 200 µH
120
110
100
90 IC = 4.5 A
80
70
60
TJ = 25°C
TJ = 125°C
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
400
350
IC = 2 A
IB(off) = IC/2
VCC = 15 V
300
VZ = 300 V
LC = 200 µH
250
200
150 IC = 4.5 A
100 TJ = 25°C
50 TJ = 125°C
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100
DC (MJE18008)
5 ms
10
1 ms
1
10 µs 1 µs
EXTENDED
SOA
9
8
7
6
5
4
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH
DC (MJF18008)
0.1
0.01
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
3
2
–5V
1
0
VBE(off) = 0 V
–1, 5 V
0 200 400 600 800 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe
Operating Area
1,0
SECOND BREAKDOWN
0,8 DERATING
0,6
0,4
THERMAL DERATING
0,2
0,0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 15 is based on TC
= 25°C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25°C. Second breakdown
limitations do not derate the same as thermal limitations.
Allowable current at the voltages shown in Figure 15 may be
found at any case temperature by using the appropriate curve
on Figure 17. TJ(pk) may be calculated from the data in Figure
20 and 21. At any case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction
reverse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never
subjected to an avalanche mode.
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MJE18008.PDF ] | |
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