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PDF MJE18004 Data sheet ( Hoja de datos )
| Número de pieza | MJE18004 | |
| Descripción | POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18004/D
™Designer's Data Sheet
SWITCHMODE™
NPN Bipolar Power Transistor
For Switching Power Supply Applications
MJE18004 *
MJF18004 *
*Motorola Preferred Device
The MJE/MJF18004 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. This high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Two Package Choices: Standard TO–220 or Isolated TO–220
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ MJF18004, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
Rating
Symbol MJE18004 MJF18004 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
VCEO 450 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
VCES
VEBO
IC
ICM
1000
9.0
5.0
10
Vdc
Vdc
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak(1)
IB 2.0 Adc
IBM 4.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage(2) Test No. 1 Per Fig. 22a
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ< 30%, TA = 25_C)
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
Total Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
(TC = 25_C)
VISOL
PD
—
—
—
75
0.6
4500
3500
1500
35
0.28
Volts
Watts
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol MJE18004 MJF18004 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance — Junction to Case
— Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8″ from Case for 5 Seconds
RθJC
RθJA
TL
1.65 3.55
62.5 62.5
260
_C/W
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Rated VCES, VEB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 800 V, VEB = 0)
(TC = 25_C)
(TC = 125_C)
(TC = 125_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
VCEO(sus)
ICEO
ICES
IEBO
450
—
—
—
—
—
CASE 221A–06
TO–220AB
MJE18004
CASE 221D–02
ISOLATED TO–220 TYPE
MJF18004
Typ Max Unit
— — Vdc
— 100 µAdc
— 100 µAdc
— 500
— 100
— 100 µAdc
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 3
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
MJE18004 MJF18004
1800
1600
IB(off) = IC/2
VCC = 300 V
1400 PW = 20 µs
TJ = 25°C
TJ = 125°C
1200
1000
IC/IB = 10
800
IC/IB = 5
600
400
200
0
0 1 2 34 5
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, ton
3000 IC/IB = 5
2500
2000
IC/IB = 10
1500
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
1000
500
0
0 1 2 34 5
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Resistive Switching, toff
3500
3000
2500
2000
1500
1000
500
0
0
IC/IB = 5
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 µH
TJ = 25°C
TJ = 125°C
IC/IB = 10
12 3 4
IC COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, tsi
5
3500
VZ = 300 V
3000
TJ = 25°C
TJ = 125°C
VCC = 15 V
IB(off) = IC/2
LC = 200 µH
2500
2000
IC = 2 A
1500
1000 IC = 1 A
500
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 10. Inductive Storage Time, tsi(hFE)
300
250
200 tfi
150
tc
100
VZ = 300 V
50
VCC = 15 V
IB(off) = IC/2
LC = 200 µH
0
01
2
TJ = 25°C
TJ = 125°C
34
IC, COLLECTOR CURRENT (AMPS)
5
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
250
TJ = 25°C
TJ = 125°C
200
150 tc
100
VZ = 300 V
50 VCC = 15 V
IB(off) = IC/2
0 LC = 200 µH
01
2
tfi
34
IC, COLLECTOR CURRENT (AMPS)
5
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MJE18004.PDF ] | |
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