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Datasheet MJD243 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJD243 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJD243
DESCRIPTION ·DC Current Gain-
: hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage-
: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJD253 ·Minimum Lot-to-Lot variations for robust device performance
and reliable |  Inchange Semiconductor | transistor |
| 2 | MJD243 | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD243/D
Plastic Power Transistor
MJD243*
*Motorola Preferred Device
DPAK For Surface Mount Applications
. . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage |  Motorola Semiconductors | transistor |
| 3 | MJD243 | Complementary Silicon Plastic Power Transistor MJD243 (NPN), MJD253 (PNP)
Preferred Device
Complementary Silicon Plastic Power Transistor
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier applications.
Features http://onsemi.com
4.0 A, 100 V, 12.5 W POWER TRANSISTOR
4 4 Base 1 Collector |  ON | transistor |
MJD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MJD112 | Silicon NPN transistor MJD112
Rev.E May.-2016
DATA SHEET
描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.
特征 / Features
直流电流增益高，E 与 C 间内置阻尼二极管电性能与 TIP112 等同。 High DC current gain, built-in a damp  BLUE ROCKET ELECTRONICS  | ||
| 2 | MJD112 | Silicon NPN epitaxial planer Transistors MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
MJD112
Features
• Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information)
• Case Material:Molded Plast  MCC | ||
| 3 | MJD112 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD112
DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for Inchange Semiconductor | ||
| 4 | MJD112 | NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor
MJD112
NPN Silicon Darlington Transistor
Features
• High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix)
November 2006
tm
Equivalent Circuit C
B
1 D-PAK
1.Base 2.Collector 3.Emitter
R1 R2
 Fairchild Semiconductor | ||
| 5 | MJD112 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD112 NPN MJD117 PNP
DPAK (TO-252) Plastic Package
Designed for General Purpose Power and Switching Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Coll  CDIL | ||
| 6 | MJD112 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD112
TRANSISTOR (NPN)
yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications
TO-251-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise note  JCET | ||
| 7 | MJD112 | Complementary Darlington Power Transistors MJD112 (NPN), MJD117 (PNP)
Complementary Darlington Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features
• Lead Formed for Surf ON |
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