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Datasheet MJD122 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MJD122Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJD122 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable op
Inchange Semiconductor
Inchange Semiconductor
transistor
2MJD122SMD Darlington Power Transistor

SMD Darlington Power Transistor (NPN) MJD122 SMD Darlington Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Me
TAITRON
TAITRON
transistor
3MJD122NPN Transistor

-,$1*68&+$1*-,$1*(/(&7521,&67(&+12/2*<&2/7' 72-3L 3ODVWLF(QFDSVXODWH7UDQVLVWRUV 0-' TRANSISTOR(NPN) )($785(6 ∙ High DC Current Gain ∙   Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 72/  1.BASE 2.COLLECTOR 3.EMITTER 0$;,0805$7,1*6
JCET
JCET
transistor
4MJD122Complementary Darlington Power Transistors

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Re
ON
ON
transistor
5MJD122Complementary power Darlington transistors

MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island�
ST Microelectronics
ST Microelectronics
transistor


MJD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MJD112Silicon NPN transistor

MJD112 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.  特征 / Features 直流电流增益高,E 与 C 间内置阻尼二极管电性能与 TIP112 等同。 High DC current gain, built-in a damp
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
transistor
2MJD112Silicon NPN epitaxial planer Transistors

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plast
MCC
MCC
transistor
3MJD112Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for
Inchange Semiconductor
Inchange Semiconductor
transistor
4MJD112NPN Silicon Darlington Transistor

MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2
Fairchild Semiconductor
Fairchild Semiconductor
transistor
5MJD112COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Coll
CDIL
CDIL
transistor
6MJD112NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD112 TRANSISTOR (NPN) yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise note
JCET
JCET
transistor
7MJD112Complementary Darlington Power Transistors

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surf
ON
ON
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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