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Datasheet MJ4502 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJ4502 | POWER TRANSISTORS(30A /100V /200W) A
A
A
|  Mospec | transistor |
| 2 | MJ4502 | 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ4502/D
MJ4502 High-Power PNP Silicon Transistor
. . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A • Excellent Safe |  Motorola Semiconductors | transistor |
| 3 | MJ4502 | POWER TRANSISTOR PNP SILICON MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ4502/D
MJ4502 High-Power PNP Silicon Transistor
. . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A • Excellent Safe |  ON | transistor |
| 4 | MJ4502 | COMPLEMENTARY HIGH POWER TRANSISTORS |  ST Microelectronics | transistor |
| 5 | MJ4502 | PNP PLANAR SILICON TRANSISTOR MJ 4502
AUDIO POWER AMPLIFIER DC TO DC CONVERTER
PNP
PLANAR SILICON TRANSISTOR
TO-3
! ! ! High Current Capability High Power Dissipation Complementary to MJ802
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Curre |  Wing Shing Computer Components | transistor |
MJ4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MJ400 | Bipolar NPN Device MJ400
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
14.48 (0.570) 14.99 (0.590)
2
0.71 (0.028) 0.86 (0.034)
Bi  Seme LAB  | ||
| 2 | MJ4030 | Power Transistor Motorola Semiconductors | ||
| 3 | MJ4030 | POWER TRANSISTORS(16A /60-100V /150W) A
A
A
Mospec | ||
| 4 | MJ4030 | Silicon PNP Darlingtion Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier application  Inchange Semiconductor | ||
| 5 | MJ4030 | MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use as output devices in complementary general purpose amplifie  Comset Semiconductors | ||
| 6 | MJ4030 | Trans Darlington PNP 60V 16A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor | ||
| 7 | MJ4031 | Power Transistor Motorola Semiconductors |
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