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Datasheet MJ15023 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJ15023 | POWER TRANSISTOR(16A /200-250V /250W) A
A
A
|  Mospec | transistor |
| 2 | MJ15023 | 16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ15023/D
Silicon Power Transistors
The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100% Tested) — 2 A @ 80 V � |  Motorola Semiconductors | transistor |
| 3 | MJ15023 | SILICON POWER TRANSISTORS MJ15023 (PNP), MJ15025 (PNP)
Silicon Power Transistors
The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area • High DC Current Gain • Complementary to MJ15022 (NPN), MJ15024 (NPN) � |  ON | transistor |
| 4 | MJ15023 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) MJ15023
AUDIO POWER AMPLIFIER DC TO DC CONVERTER
PNP
PLANAR SILICON TRANSISTOR
TO-3
! ! ! High Current Capability High Power Dissipation Complementary to MJ15022
ABSOLUTE MAXIMUM RATING (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Cur |  Wing Shing Computer Components | transistor |
| 5 | MJ15023 | (MJ15023 / MJ15025) Silicon PNP Power Transistors
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Complement to type MJ15022; MJ15024 ·Excellent safe operating area ·High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS ·Designed for high power audio, dis |  Savantic | transistor |
MJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MJ1000 | Medium-Power Complementary Silicon Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ1000/D
Medium-Power Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction wi  Motorola Inc  | ||
| 2 | MJ1000 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ1000/1001
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier appli  SavantIC | ||
| 3 | MJ1000 | (MJ1000 / MJ1001) Complementary Power Darlingtons NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the  Comset Semiconductors | ||
| 4 | MJ1000 | Trans GP BJT NPN 60V 8A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor | ||
| 5 | MJ10000 | POWER TRANSISTORS(20A/350-400V/175W) A
A
A
A
 Mospec Semiconductor | ||
| 6 | MJ10000 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ10000/D
MJ10000
Designer's
SWITCHMODE Series NPN Silicon Power Darlington Transistor
The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. I Motorola Inc | ||
| 7 | MJ10000 | NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) MJ10000
NPN
SILICON TRANSISTOR
SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
Wing Shing Computer Components |
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