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PDF MCR25D Data sheet ( Hoja de datos )
| Número de pieza | MCR25D | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | ON | |
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MCR25D, MCR25M, MCR25N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
• High Surge Current Capability — 300 Amperes
• Rugged, Economical TO–220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C
• Device Marking: Logo, Device Type, e.g., MCR25D, Date Code
http://onsemi.com
SCRs
25 AMPERES RMS
400 thru 800 VOLTS
G
AK
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open)
MCR25D
MCR25M
MCR25N
VDRM,
VRRM
400
600
800
Unit
Volts
On-State RMS Current
IT(RMS)
(180° Conduction Angles; TC = 80°C)
25
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.3 ms)
ITSM
I2t
300 A
373 A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
20.0
0.5
2.0
– 40 to
+125
Watts
Watt
A
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR25D
TO220AB
50 Units/Rail
MCR25M
TO220AB
50 Units/Rail
MCR25N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 3
1
Publication Order Number:
MCR25/D
1 page  
MCR25D, MCR25M, MCR25N
1200 2500
Gate Cathode Open,
Gate–Cathode Open,
(dv/dt does not depend on RGK )
1000
(dv/dt does not depend on RGK)
2000
800
1500
85°C
VPK = 275
600
110°C
100°C
1000
400
TJ = 125°C
VPK = 600
VPK = 400
500
200 VPK = 800
0
200 300 400 500 600 700
VPK , Peak Voltage (Volts)
Figure 9. Typical Exponential Static dv/dt
Versus Peak Voltage.
800
0
80 85 90 95 100 105 110 115 120 125
TJ, Junction Temperature (°C )
Figure 10. Typical Exponential Static dv/dt
Versus Junction Temperature.
300
1 CYCLE
280
260
240
220
200
TJ=125° C f=60 Hz
180
160
1
23456789
NUMBER OF CYCLES
Figure 11. Maximum Non–Repetitive
Surge Current
10
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MCR25D.PDF ] | |
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