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PDF MBRB735 Data sheet ( Hoja de datos )

Número de pieza MBRB735
Descripción Schottky Rectifier ( Diode )
Fabricantes General Semiconductor 
Logotipo General Semiconductor Logotipo



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No Preview Available ! MBRB735 Hoja de datos, Descripción, Manual

MBRB735 THRU MBRB760
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING
PLATE
-T-
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Metal silicon junction
majority carrier conduction
Low power loss, high efficiency
High current capability, low forward
voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (SEE FIG 1)
Peak repetitive forward current (square wave, 20 KHZ)
at TC=105°C
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current (NOTE 1)
Maximum instantaneous
forward voltage at
(NOTE 2)
IF=7.5A, TC=25°C
IF=7.5A, TC=125°C
IF=15A, TC=25°C
IF=15A, TC=125°C
Maximum instantaneous reverse current at
rated DC blocking voltage
TC=25°C
(NOTE 1)
TC=125°C
Voltage rate of change (rated VR)
Maximum thermal resistance, (NOTE 3)
Operating junction temperature range
Storage temperature range
NOTES:
(1) 2.0µs, pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case
SYMBOLS
VRRM
VRWM
VDC
I(AV)
IFRM
IFSM
IRRM
VF
IR
dv/dt
RΘJC
TJ
TSTG
MBRB735
35
35
35
MBRB745 MBRB750
45 50
45 50
45 50
7.5
15.0
MBRB760
60
60
60
150.0
1.0
-
0.57
0.84
0.72
0.5
0.75
0.65
-
-
0.1
15.0
10,000
3.0
-65 to +150
-65 to +175
0.5
50.0
1,000
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
Amps
Volts
mA
V/µs
°C/W
°C
°C
4/98

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