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PDF MBR5100 Data sheet ( Hoja de datos )

Número de pieza MBR5100
Descripción SCHOTTKY DIE SPECIFICATION
Fabricantes ETC 
Logotipo ETC Logotipo



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No Preview Available ! MBR5100 Hoja de datos, Descripción, Manual

Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 100 V 5 A ( Low Ir)
TYPE: MBR5100
Single Anode
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage: Ir=1mA(for wafer form)
Ir=0.5mA (for dice form)
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 5 Amperes, Ta=25°C
SYM
VRRM
IFAV
VF MAX
Spec. Limit
100
5
0.85
Maximum Instantaneous Reverse Voltage
VR= 100 Volt, Ta=25°C
IR MAX
0.1
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
Cj MAX
IFSM
Tj
TSTG
120
-65 to +125
-65 to +125
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
Die Sort UNIT
105 Volt
Amp
0.84 Volt
0.09 mA
pF
Amp
°C
°C
AC
B
Top-side Metal
SiO2 Passivation
D P+ Guard Ring
Back-side Metal
DIM
ITEM
um2 Mil2
A Die Size
1838 72.36
B Top Metal Pad Size 1738 68.4
C Passivation Seal
1758 69.2
D Thickness (Min)
254 10
Thickness (Max)
305 12
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.

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