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PDF HYM322030S Data sheet ( Hoja de datos )
| Número de pieza | HYM322030S | |
| Descripción | 2M x 32-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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2M x 32-Bit Dynamic RAM Module
HYM 322030S/GS-60/-70
Advanced Information
• 2 097 152 words by 32-bit organization
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 3300 mW active (-60 version)
max. 3025 mW active (-70 version)
CMOS – 22 mW standby
TTL – 44 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 4 decoupling capacitors mounted on
substrate
• All inputs, outputs and clocks fully TTL
compatible
• 72 pin Single in-Line Memory Module
(L-SIM-72-9 ) with 20.32 mm (800 mil) height
• Utilizes four 2M × 8 - DRAMs in 400 mil
SOJ-packages
• 2048 refresh cycles / 32 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
Ordering Information
Type
HYM 322030S-60
Ordering Code
Q67100-Q976
Package
L-SIM-72-9
HYM 322030S-70
Q67100-Q977 L-SIM-72-9
HYM 322030GS-60
Q67100-Q2018 L-SIM-72-9
HYM 322030GS-70
Q67100-Q2019 L-SIM-72-9
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
561
09.94
1 page  
HYM 322030S/GS-60/-70
2M × 32-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range......................................................................................... – 55 to 125 ˚C
Soldering temperature ............................................................................................................ 260 ˚C
Soldering time ............................................................................................................................. 10 s
Input/output voltage ........................................................................ – 0.5 V to min (VCC + 0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 4.2 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
DC Characteristics1)
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current
(RAS, CAS, address cycling, tRC = tRC min)
-60 version
-70 version
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
Limit Values Unit
min.
max.
2.4
– 0.5
VCC + 0.5 V
0.8 V
2.4 –
V
– 0.4 V
– 10 10
µA
– 10 10
µA
– 550 mA
– 500 mA
Test
Condition
2)
3)
Standby VCC supply current
(RAS = CAS = VIH)
Average VCC supply current
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-60 version
-70 version
ICC2
ICC3
–
–
–
8 mA
550 mA 2)
500 mA
Semiconductor Group
565
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HYM322030S.PDF ] | |
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