PDF PVD33 Data sheet ( Hoja de datos )

Número de pieza	PVD33
Descripción	Photovoltaic Relay Microelectronic Power IC Relay Single-Pole/ 220mA/ 0-300V DC
Fabricantes	International Rectifier
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No Preview Available ! Previous Datasheet BOSFET® Photovoltaic Relay Index Next Data Sheet PD 1.025D Series PVD33 Microelectronic Power IC Relay Single-Pole, 220mA, 0-300V DC General Description The Photovoltaic DC Relay (PVD) is a single-pole, nor- mally open solid state replacement for electro-me- chanical relays used for general purpose switching of analog signals. It utilizes as an output switch a unique bidirectional (AC or DC) MOSFET power IC termed a BOSFET. The BOSFET is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically isolated light emitting di- ode (LED). The PVD overcomes the limitations of both conven- tional and reed electromechanical relays by offering the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These advan- tages allow product improvement and design innova- tions in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition. The PVD can switch analog signals from thermocouple level to 300 volts peak DC. Signal frequencies into the RF range are easily controlled and switching rates up to 6kHz are achievable. The extremely small thermally generated offset voltages allow increased measure- ment accuracies. Unique silicon technology developed by International Rectifier forms the heart of the PVD. The monolithic BOSFET contains a bidirectional N-channel power MOSFET output structure. In addition, this power IC chip has input circuitry for fast turn-off and gate protec- tion functions. This section of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transis- tors, P-channel MOSFETs, resistors, diodes and ca- pacitors. The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this tech- nique results in the very fast response of the PVD mi- croelectronic power IC relay. This advanced semiconductor technology has created a radically new control device. Designers can now de- velop switching systems to new standards of electrical performance and mechanical compactness. PVD33 Features BOSFET Power IC s 1010 Operations s 100µsec Operating Time s 3 milliwatts Pick-Up Power s 1000V/µsec dv/dt s Bounce-Free s 8-pin DIP Package s -40°C to 85°C s UL recognized s Part Identification Part Number Operating Voltage (DC) PVD2352 200V PVD3354 300V Sensitivity 5 mA Off-State Resistance 108 Ohms 1010 Ohms (BOSFET is a trademark of International Rectifier) To Order 1 page Previous Datasheet Index Next Data Sheet Series PVD33 BOSFET® Photovoltaic Relay VDS Drain to Source Voltage Figure 9. Typical Output Capacitance Wiring Diagram To Order 5 Page

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