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PDF RS2DA Data sheet ( Hoja de datos )

Número de pieza RS2DA
Descripción SURFACE MOUNT FAST SWITCHING RECTIFIER
Fabricantes Shanghai Sunrise Electronics　
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No Preview Available ! RS2DA Hoja de datos, Descripción, Manual

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RS2AA THRU RS2MA
SURFACE MOUNT FAST
SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 2.0A
TECHNICAL
SPECIFICATION
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
SMA/DO-214AC
B
AC
D
F
GH
ABCD
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
E FGH
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
RS2
AA
RS2
BA
RS2
DA
RS2
GA
RS2
JA
RS2
KA
RS2
MA
UNITS
Maximum Repetitive Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS
35 70 140 280 420 560 700
V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
(TL=110oC)
IF(AV) 2.0 A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
50
A
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=125oC
Maximum Reverse Recovery Time (Note 1)
VF
IR
trr
1.3
5.0
200
150 250 500
V
µA
µA
nS
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
Storage and Operation Junction Temperature
CJ
Rθ(ja)
TSTG,TJ
30
16
-50 to +150
pF
oC/W
oC
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com

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