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PDF SLD322V-3 Data sheet ( Hoja de datos )

Número de pieza SLD322V-3
Descripción High Power Density 0.5W Laser Diode
Fabricantes Sony Corporation 
Logotipo Sony Corporation Logotipo



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No Preview Available ! SLD322V-3 Hoja de datos, Descripción, Manual

SLD322V
High Power Density 0.5W Laser Diode
Description
The SLD322V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the
SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
achieved by QW-SCH structure2.
1 MOCVD: Metal Organic Chemical Vapor Deposition
2 QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
High power
Recommended optical power output: Po = 0.5W
Low operating current: Iop = 0.75A (Po = 0.5W)
Applications
Solid state laser excitation
Medical use
Material processes
Measurement
Structure
GaAlAs quantum well structure laser diode
Absolute Maximum Ratings (Tc = 25°C)
Optical power output
Po
0.55
Reverse voltage
VR LD
2
PD 15
Operating temperature (Tc) Topr
–10 to +30
Storage temperature Tstg –40 to +85
W
V
V
°C
°C
Pin Configuration
21
3
Bottom View
1. LD cathode
2. PD anode
3. COMMON
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E93205A81-PS

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SLD322V-3 pdf
Power dependence of spectrum
1.0
Tc = 25°C
Po = 0.2W
0.8
0.6
0.4
0.2
796 798 800 802 804
Wavelength [nm]
1.0
Tc = 25°C
Po = 0.4W
0.8
0.6
0.4
0.2
796 798 800 802 804
Wavelength [nm]
SLD322V
1.0
Tc = 25°C
Po = 0.3W
0.8
0.6
0.4
0.2
796 798 800 802 804
Wavelength [nm]
1.0
Tc = 25°C
Po = 0.5W
0.8
0.6
0.4
0.2
796 798 800 802 804
Wavelength [nm]
–5–

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