PDF TIP145F Data sheet ( Hoja de datos )

Número de pieza	TIP145F
Descripción	Monolithic Construction With Built In Base- Emitter Shunt Resistors
Fabricantes	Fairchild Semiconductor
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No Preview Available ! TIP145F/146F/147F Monolithic Construction With Built In Base- Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140F/141F/142F PNP Epitaxial Darlington Transistor 1 TO-3PF 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Emitter Voltage : TIP145F : TIP146F : TIP147F Value - 60 - 80 - 100 Units V V V VCEO Collector-Emitter Voltage : TIP145F : TIP146F : TIP147F - 60 - 80 - 100 V V V VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature -5 - 10 - 15 - 0.5 60 150 - 65 ~ 150 V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP145F : TIP146F : TIP147F Test Condition IC = - 30mA, IB = 0 ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tf Collector Cut-off Current : TIP145F : TIP146F : TIP147F Collector Cut-off Current : TIP145F : TIP146F : TIP147F Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Delay Time Rise Time Storage Time Fall Time VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 5A VCE = - 4V, IC = - 10A IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA IC = - 10A, IB = - 40mA VCE = - 4V, IC = - 10A VCC = - 30V, IC = - 5A IB1 = -20mA, IB2 = 20mA RL = 6Ω ©2002 Fairchild Semiconductor Corporation Equivalent Circuit C B R1 R1 ≅ 8kΩ R2 ≅ 0.12kΩ R2 E Min. Typ. Max. Units - 60 - 80 - 100 V V V - 2 mA - 2 mA - 2 mA 1000 500 0.15 0.55 2.5 2.5 - 1 mA - 1 mA - 1 mA - 2 mA -2 -3 - 3.5 -3 V V V V µs µs µs µs Rev. B, December 2002 1 page

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