|
|
PDF TPCS8209 Data sheet ( Hoja de datos )
| Número de pieza | TPCS8209 | |
| Descripción | High performance/ Low Cost 20 pin OTP | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TPCS8209 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
TPCS8209
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8209
Lithium Ion Battery Applications
Notebook PC Applications
Portable Machines and Tools
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 9.2 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
20
20
±12
5
20
1.1
0.75
0.6
0.35
32.5
5
0.075
150
−55~150
V
V
V
A JEDEC
JEITA
―
―
TOSHIBA
2-3R1E
W Weight: 0.035 g (typ.)
Circuit Configuration
W 8765
mJ
A
mJ
°C 1 2 3 4
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-01-17
1 page  
RDS (ON) – Ta
60
VGS = 2.0 V
50
2.5
40 ID = 5 A VGS = 2.5 V
1.25
30
ID = 5, 2.5, 1.25 A
20
ID = 5, 2.5, 1.25 A
10
0
−50 0
50
VGS = 4.0 V
Common source
Pulse test
100 150
Ambient temperature Ta (°C)
TPCS8209
10
54
3
2
IDR – VDS
1
VGS = 0 V
1
0.5
0.3
Common source
Ta = 25°C
Pulse test
0.1
0
−0.2
−0.4
−0.6
−0.8
−1
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Crss
Common source
Ta = 25°C
f = 1MHz
VGS = 0 V
10
0.1
1
10
Drain-source voltage VDS (V)
100
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−100
Vth – Ta
Common source
VDS = 10 V
ID = 200 µA
Pulse test
−50 0
50 100
Ambient temperature Ta (°C)
150
1.2
(1)
1
0.8 (2)
(3)
0.6
PD – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0.4 (4)
0.2
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
30
Common source
25 ID = 5 A
Ta = 25°C
Pulse test
20
VDS = 16 V
15
VGS
12
10
8
6
10 4
52
00
0 4 8 12 16 20 24 28 32
Total gate charge Qg (nC)
5 2002-01-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCS8209.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TPCS8201 | Field Effect Transistor | Toshiba Semiconductor |
| TPCS8204 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) | Toshiba Semiconductor |
| TPCS8205 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) | Toshiba Semiconductor |
| TPCS8208 | Silicon N Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |