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Número de pieza | TP3022 | |
Descripción | NPN SILICON UHF POWER TRANSISTOR | |
Fabricantes | Motorola Inc | |
Logotipo | ||
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No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
The TP3022B is designed for common–emitter operation in the 900 MHz
mobile radio band. Use of gold metallization and silicon diffused ballast
resistors results in a medium power output/driver transistor with state–of–the–
art ruggedness and reliability.
• Specified 26 Volts, 960 MHz Characteristics:
Output Power = 15 Watts
Minimum Gain = 8.5 dB
IQ = 50 mA
• Class AB Operation
Order this document
by TP3022B/D
TP3022B
15 W, 960 MHz
NPN SILICON
UHF POWER
TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 29 Vdc
0.167
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
TJ 200 °C
Tstg – 65 to +150 °C
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Case (1)
RθJC
6.0 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ohms)
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ohms)
Emitter–Base Breakdown Voltage
(IC = 5.0 mAdc)
Emitter–Base Leakage
(VBE = 2.5 V)
V(BR)CER
ICER
V(BR)EBO
IEBO
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 10 V)
hFE
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, IE = 0, f = 1.0 MHz)
Cob
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)
GPE
Collector Efficiency
(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)
ηc
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
Min
40
—
3.5
—
15
—
8.5
45
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 319–07, STYLE 2
Typ Max Unit
— — Vdc
— 5.0 mA
— — Vdc
— 1.0 mA
— 100 —
17 25 pF
— — dB
——%
TP3022B
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet TP3022.PDF ] |
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