|
|
PDF TPV598 Data sheet ( Hoja de datos )
| Número de pieza | TPV598 | |
| Descripción | UHF LINEAR POWER TRANSISTOR | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TPV598 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Linear Power Transistor
Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold
metallized dice and diffused emitter ballast resistors are used to enhance
reliability, ruggedness and linearity.
• Band IV and V (470– 860 MHz)
• 4.0 W — Pref @ – 60 dB IMD
• 25 V — VCC
• High Gain — 7.0 dB Min, Class A @ f = 860 MHz
• Gold Metallization for Reliability
Order this document
by TPV598/D
TPV598
4.0 W, 470 – 860 MHz
UHF LINEAR
POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
TJ
Tstg
27
45
4.0
200
– 65 to + 200
Vdc
Vdc
Vdc
°C
°C
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
Thermal Resistance, Case to Heatsink
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 3.0 mA, IC = 0)
Collector–Emitter Leakage Current (VCE = 20 V)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
DC Current Gain (IC = 500 mA, VCE = 20 V)
DYNAMIC CHARACTERISTICS
hFE
Output Capacitance (VCB = 25 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob
Common–Emitter Amplifier Power Gain
(VCE = 25 V, Pout = 4.0 W, f = 860 MHz, IC = 850 mA)
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 25 V, IE = 850 mA, Pref = 4.0 W,
Vision Carrier = – 8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
GPE
IMD1
Cutoff Frequency
(VCE = 25 V, IC = 850 mA)
fτ
Symbol
RθJC
RθCH
Min
27
45
4.0
—
10
—
7.0
—
—
CASE 244–04, STYLE 1
(.280 SOE)
Max
6.2
0.4 Typ
Typ Max
——
——
——
— 5.0
——
— 20
——
— – 58
Unit
°C/W
°C/W
Unit
Vdc
Vdc
Vdc
mA
—
pF
dB
dB
2.0 — GHz
REV 1
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
TPV598
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TPV598.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TPV590 | NPN SILICON RF POWER TRANSISTOR |  Advanced Semiconductor |
| TPV591 | NPN SILICON RF POWER TRANSISTOR |  ASI |
| TPV591 | TRANS GP BJT NPN 27V 4CASE244-04 |  New Jersey Semiconductor |
| TPV593 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |