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Número de pieza | IRF840AL | |
Descripción | Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! PD- 91901B
SMPS MOSFET
IRF840AS
IRF840AL
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
VDSS
500V
RDS(on) max
0.85Ω
ID
8.0A
Benefits
l Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN 1001)
D2Pak
IRF840AS
TO-262
IRF840AL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
8.0
5.1
32
125
3.1
1.0
± 30
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Two Transistor Forward
l Haft Bridge
l Full Bridge
Notes through are on page 10
www.irf.com
1
12/16/99
1 page IRF840AS/L
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
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5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRF840AL.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF840A | Power MOSFET ( Transistor ) | Vishay |
IRF840A | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRF840A | Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) | International Rectifier |
IRF840A | N-Channel Power MOSFET / Transistor | nELL |
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