|
|
PDF IRF6665 Data sheet ( Hoja de datos )
| Número de pieza | IRF6665 | |
| Descripción | DIGITAL AUDIO MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF6665 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DIGITAL AUDIO MOSFET
PD - 96900
IRF6665
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
Key Parameters
VDS 100
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) typ.
53
8.7
1.9
V
m:
nC
• Can deliver up to 100W per channel into 8Ω with no heatsink
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· Lead and Bromide Free
SH DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing
techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate
resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and
resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage
ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power
applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal
transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient,
robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
100
± 20
V
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
19
4.2 A
3.4
34
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
ePower Dissipation
ePower Dissipation
42 W
2.2
1.4
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.017
-40 to + 150
W/°C
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
ekJunction-to-Ambient
hkJunction-to-Ambient
ikJunction-to-Ambient
jkJunction-to-Case
Junction-to-PCB Mounted
Notes through are on page 2
www.irf.com
Typ.
–––
12.5
20
–––
1.4
Max.
58
–––
–––
3.0
–––
Units
°C/W
1
10/11/04
1 page  
200
180 ID = 5.0A
160
140
120
100 TJ = 125°C
80
60
40 TJ = 25°C
20
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 15a. Switching Time Test Circuit
www.irf.com
IRF6665
120
100 TJ = 125°C
80
60 TJ = 25°C
Vgs = 10V
40
0
2468
ID, Drain Current (A)
10
Fig 13. On-Resistance vs. Drain Current
50
ID
TOP
0.86A
40 1.3A
BOTTOM 5.0A
30
20
10
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14c. Maximum Avalanche Energy vs. Drain Current
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF6665.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF6662 | DirectFet Power MOSFET | International Rectifier |
| IRF6662PbF | Power MOSFET ( Transistor ) |  IRF |
| IRF6662PBF | Power MOSFET ( Transistor ) | International Rectifier |
| IRF6662TRPbF | Power MOSFET ( Transistor ) | IRF |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |