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PDF IRF6217 Data sheet ( Hoja de datos )

Número de pieza IRF6217
Descripción HEXFET Power MOSFET(Reset Switch for Active Clamp Reset DC to DC converters)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF6217 Hoja de datos, Descripción, Manual

PD - 94359
SMPS MOSFET
Applications
l Reset Switch for Active Clamp Reset
DC to DC converters
VDSS
-150V
IRF6217
HEXFET® Power MOSFET
RDS(on) max
ID
2.4@VGS =-10V -0.7A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
T op V ie w
A
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-0.7
-0.5
-5.0
2.5
0.02
± 20
4.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
02/13/02

1 page




IRF6217 pdf
IRF6217
1.0
0.8
0.6
0.4
0.2
0.0
25
50 75 100
TC , Case Temperature
125
( ° C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA + T A
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5

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