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PDF IRLZ34NS Data sheet ( Hoja de datos )
| Número de pieza | IRLZ34NS | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 9.1308A
PRELIMINARY
IRLZ34NS
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
G
D
VDSS = 55V
RDS(on) = 0.035Ω
S ID = 27A
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
D 2Pak
Max.
27
19
110
56
0.37
±16
110
16
5.6
10
-55 to + 175
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount,steady-state)**
Min.
––––
––––
To Order
Typ.
––––
––––
Max.
2.7
40
Units
°C/W
11/11/96
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IRLZ34NS
30
25
20
15
10
5
0A
25 50 75 100 125 150 175
TC , C ase T em perature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.2 0
0 .1 0
0.05
0.1
0.02
0.01
S IN G LE P U LS E
(TH E R M A L R E S P O NS E )
0.01
0.00001
0.0001
PD M
N o te s:
1. Duty fac tor D = t1 / t 2
t1
t2
2. Peak TJ = PD M x Z thJC + T C
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
A
1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLZ34NS.PDF ] | |
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