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PDF SGF9 Data sheet ( Hoja de datos )
| Número de pieza | SGF9 | |
| Descripción | For C to X-band Local Oscillator and Amplifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SGF9 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Ordering number : ENN*0000
SGF9
N-Channel GaAs MESFET
SGF9
For C to X-band Local Oscillator and Amplifier
Preliminary
Features
• Mold package-owing to the cross-mold technology,
this product can maintain the same performance as
the ceramic package.
• The chip surface is covered
with the highly reliable protection film.
• Automatic surface mounting is available.
Package Dimensions
unit : mm
0000
[SGF9]
3
2
(0.9 ±0.05)
2
1
0.4 ±0.02
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Source Leak Current
Saturated Drain Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)GSO
IDSS
VGS(off)
yfs
IGS=--10µA
VDS=3V, VGS=0
VDS=3V, ID=100µA
VDS=3V, ID=10mA
4.1±0.1
1 : Drain
2 : Source
3 : Gate
Ratings
6.0
--5.0
100
130
150
--55 to +150
Unit
V
V
mA
mW
°C
°C
min
--5.0
30
--0.5
20
Ratings
typ
max
Unit
V
40 70 mA
--5.0 V
35 mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40901 TS IM hirata No.0000-1/8
1 page  
S-Parameter
SGF9
S11 S21
50
25
10 12.0GHz
9.0GHz
0 10
25 50 100
VDS=3V
--10 6.0GHz IDS=20mA
--25
--50
100
150
200
250
150 250
--250
--200
--150
--100
R max=1
IT03383
120°
90°
60°
150°
±180°
VDS=3V
IDS=20mA
6.0GHz
9.0GHz
12.0GHz
30°
5
--150°
--30°
--120°
--90°
--60° R max=5
IT03384
S12 S22
120°
90°
60°
150°
±180°
VDS=3V
IDS=20mA
30°
12.0GHz 61.05G.0HGzHz 0.2
9.0GHz
--150°
--120°
--90°
--30°
--60° R max=0.2
IT03385
25
10
15.0GHz
0 10 25
12.0GHz
--10
--25
50
100
150
200
250
50 100
150 250
VDS=3V
IDS=20mA
--50
--250
--200
--150
--100
R max=1
IT03386
START 1GHz
STOP 16GHz
No.0000-5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SGF9.PDF ] | |
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