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PDF 2SD2551 Data sheet ( Hoja de datos )

Número de pieza 2SD2551
Descripción SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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2SD2551
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2551
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
l High Voltage
: VCBO = 1700 V
l Low Saturation Voltage : VCE (sat) = 5.0 V (Max.)
l High Speed
: tf = 1.0 µs (Max.)
l Bult-in Damper Type
l Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1700
600
5
5
10
2.5
50
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
EmitterBase Breakdown Voltage
DC Current Gain
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time
Fall Time
SYMBOL
TEST CONDITION
ICBO
IEBO
V (BR) EBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VF
fT
Cob
tstg
tf
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 300 mA, IB = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 4 A
IC = 4 A, IB = 0.8 A
IC = 4 A, IB = 0.8 A
IF = 5 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 4 A, IB1 (end) = 0.8 A
fH = 15.75 kHz
1
MIN TYP. MAX UNIT
――
1 mA
66 200 mA
5 ―― V
8 28
5 10
―― 5 V
― ― 1.5 V
1.6 2.0 V
3 MHz
125
pF
7.5 10
µs
0.5 1.0
2001-08-21

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