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PDF 2SD2216 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2216 | |
| Descripción | Silicon NPN epitaxial planer type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1462
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
50
7
200
100
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : Y
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCB = 20V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
0.1 µA
100 µA
60 V
50 V
7V
160 460
90
Collector to emitter saturation voltage VCE(sat)
Transition frequency
fT
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
0.1 0.3
V
150 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5 pF
*hFE1 Rank classification
Rank
Q
hFE1
Marking Symbol
160 ~ 260
YQ
R
210 ~ 340
YR
S
290 ~ 460
YS
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2216.PDF ] | |
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