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PDF 2SD2136 Data sheet ( Hoja de datos )

Número de pieza 2SD2136
Descripción Silicon NPN triple diffusion planar type
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SD2136 Hoja de datos, Descripción, Manual

Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1416
Features
High forward current transfer ratio hFE which has satisfactory linearity.
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
60
6
3
5
1.5
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 30 mA, IB = 0 60 V
Base-emitter voltage *1
VBE VCE = 4 V, IC = 3 A
1.8 V
Collector-emitter cutoff current (Emitter-base short) ICES VCE = 60 V, VBE = 0
200 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 30 V, IB = 0
300 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
1 mA
Forward current transfer ratio
hFE1 *2 VCE = 4 V, IC = 1 A
40 250
hFE2 *1 VCE = 4 V, IC = 3 A
10
Collector-emitter saturation voltage *1 VCE(sat) IC = 3 A, IB = 0.375 A
1.2 V
Transition frequency
fT VCE = 5 V, IE = − 0.1 A, f = 200 MHz 220 MHz
Turn-on time
ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A
0.5 µs
Storage time
tstg
2.5 µs
Fall time
tf
0.4 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
hFE1
40 to 90
70 to 150
120 to 250
Publication date: September 2003
SJD00246BED
1

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