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PDF 2SD1867 Data sheet ( Hoja de datos )

Número de pieza 2SD1867
Descripción Power Transistor
Fabricantes ROHM Semiconductor 
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Power Transistor (100V, 2A)
2SD1980 / 2SD1867
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1316.
zinner circuit
C
B
R1 R2
E
R1 3.5k
R2 300
B : Base
C : Collector
E : Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
100
6
V
V
Collector current
IC
2
3 1
Collector
power
dissipation
2SD1980
2SD1867
PC
1
10
1 2
Junction temperature
Tj 150
Storage temperature
Tstg
55 to +150
1 Single pulse Pw=100ms
2 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
A(DC)
A(Pulse)
W
W(Tc=25°C)
W
°C
°C
zPackaging specifications and hFE
Type
2SD1980
2SD1867
Package
hFE
Marking
CPT3
1k to 10k
ATV
1k to 10k
Code
TL TV2
Basic ordering unit (pieces)
Denotes hFE
2500
2500
zDimensions (Unit : mm)
2SD1980
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
ROHM : CPT3
EIAJ : SC-63
2SD1867
6.8
0.5
1.0
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
(1) (2) (3)
2.54 2.54
0.5
ROHM : ATV
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
100
100
6
1000
Typ.
80
25
Max.
10
3
1.5
2.0
10000
Unit
V
V
V
µA
mA
V
V
MHz
pF
Conditions
IC = 50µA
IC = 5mA
IE = 5mA
VCB = 100V
VEB = 5V
IC = 1A , IB = 1mA
IC/IB = 1A/1mA
VCE = 2V , IC = 1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.C

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