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Número de pieza | 2SD1775 | |
Descripción | Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD1775 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power Transistors
2SD1775, 2SD1775A
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1775
base voltage 2SD1775A
VCBO
80
100
Collector to 2SD1775
emitter voltage 2SD1775A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
IB
PC
6
4
2
0.5
25
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1775
current
2SD1775A
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1775
voltage
2SD1775A
ICBO
ICEO
IEBO
VCEO
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = 4V, IC = 300mA
IC = 1A, IB = 25mA
IC = 1A, IB = 25mA
VCE = 12V, IC = 200mA, f = 10MHz
VCB = 10V, IE = 0, f = 1MHz
IC = 1A, IB1 = 25mA, IB2 = –25mA,
VCC = 50V
*hFE Rank classification
Rank
Q
P
hFE 500 to 1000 800 to 1500
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
100
µA
100
100 µA
100 µA
60
V
80
500 1500
1.0 V
1.2 V
40 MHz
30 pF
0.6 µs
2.5 µs
1.0 µs
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SD1775.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SD1770 | Silicon NPN Darlington Power Transistor | Inchange Semiconductor Company |
2SD1771 | Silicon NPN triple diffusion planar type | Panasonic Semiconductor |
2SD1771A | Silicon NPN triple diffusion planar type | Panasonic Semiconductor |
2SD1772 | Silicon NPN triple diffusion planar type | Panasonic Semiconductor |
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