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PDF 2SD1773 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1773 | |
| Descripción | Silicon NPN triple diffusion planar type Darlington(For midium speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD1773
Silicon NPN triple diffusion planar type Darlington
For midium speed switching
Complementary to 2SB1193
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
120
120
7
12
8
50
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
VCEO(sus)
VEBO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
VCB = 120V, IE = 0
VCE = 100V, IB = 0
IC = 2A, L = 10mH
IE = 50mA, IC = 0
VCE = 3V, IC = 4A
IC = 4A, IB = 8mA
IC = 8A, IB = 80mA
IC = 4A, IB = 8mA
IC = 8A, IB = 80mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
E
min
120
7
1000
typ max Unit
100 µA
10 µA
V
V
20000
1.5 V
3V
2V
3.5 V
20 MHz
0.7 µs
6 µs
2 µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1773.PDF ] | |
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