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PDF 2SD1755 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1755 | |
| Descripción | Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD1755
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q High forward current transfer ratio hFE which has satisfactory
linearity
q High emitter to base voltage VEBO
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
100
60
15
12
6
3
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE*
VCE(sat)
fT
ton
tstg
tf
VCB = 100V, IE = 0
VEB = 15V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
IC = 5A, IB = 0.1A
VCE = 12V, IC = 0.5A, f = 10MHz
IC = 5A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
min typ max Unit
100 µA
100 µA
60 V
300 2000
0.5 V
50 MHz
0.3 µs
1.5 µs
0.6 µs
*hFE Rank classification
Rank
Q
P
hFE 300 to 1200 800 to 2000
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD1755.PDF ] | |
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