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PDF 2SD1539 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1539 | |
| Descripción | Silicon NPN epitaxial planar type(For low-voltage switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD1539, 2SD1539A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1071 and 2SB1071A
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1539
base voltage 2SD1539A
VCBO
40
50
Collector to 2SD1539
emitter voltage 2SD1539A
VCEO
20
40
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
8
4
25
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1539
current
2SD1539A
Emitter cutoff current
Collector to emitter 2SD1539
voltage
2SD1539A
ICBO
IEBO
VCEO
VCB = 40V, IE = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 2A, IB = 0.1A
IC = 2A, IB = 0.1A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 20V
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
50
µA
50
50 µA
20
V
40
45
90 260
0.5 V
1.5 V
120 MHz
0.2 µs
0.5 µs
0.1 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD1539.PDF ] | |
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