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PDF 2SD1277 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1277 | |
| Descripción | Silicon NPN triple diffusion planar type Darlington(For midium speed power switching) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB951 and 2SB951A
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
Collector to 2SD1277
base voltage 2SD1277A
Collector to 2SD1277
emitter voltage 2SD1277A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
80
60
80
7
12
8
45
2
150
–55 to +150
V
V
V
A
A
W
˚C
˚C
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SD1277
current
2SD1277A
Emitter cutoff current
Collector to emitter 2SD1277
voltage
2SD1277A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VEB = 7V, IC = 0
IC = 30mA, IB = 0
VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4A, IB = 8mA
IC = 4A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
60
80
2000
500
20
100
100
2
10000
µA
mA
V
1.5 V
2V
MHz
0.5 µs
4 µs
1 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 2000 to 5000 4000 to 10000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1277.PDF ] | |
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