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Número de pieza | 2SD1276 | |
Descripción | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD1276 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB950 and 2SB950A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
φ3.1±0.1
1.3±0.2
1.4±0.1
Parameter
Collector to 2SD1276
base voltage 2SD1276A
Symbol
VCBO
Ratings
60
80
Unit
V
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to 2SD1276
emitter voltage 2SD1276A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
80
5
8
4
40
2
150
–55 to +150
V
V
A
A
W
˚C
˚C
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
E
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SD1276
current
2SD1276A
Collector cutoff
2SD1276
current
2SD1276A
Emitter cutoff current
Collector to emitter 2SD1276
voltage
2SD1276A
ICBO
ICEO
IEBO
VCEO
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
200
µA
200
500
µA
500
2 mA
60
V
80
Forward current transfer ratio
hFE1
hFE2*
Collector to emitter saturation voltage VCE(sat)
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
*hFE2 Rank classification
VBE
fT
ton
tstg
tf
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 3V, IC = 3A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
1000
2000
10000
2
V
4
2.5 V
20 MHz
0.5 µs
4 µs
1 µs
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SD1276.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SD1270 | Silicon NPN epitaxial planar type(For power switching) | Panasonic Semiconductor |
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2SD1270 | Silicon PNP epitaxial planar type(For power switching) | Panasonic Semiconductor |
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