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Número de pieza | 2SD1275 | |
Descripción | Silicon PNP epitaxial planar type Darlington | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD1275 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB949 and 2SB949A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1275
base voltage 2SD1275A
VCBO
60
80
V
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to 2SD1275
emitter voltage 2SD1275A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
4
2
35
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
V
V
A
A
W
˚C
˚C
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SD1275
current
2SD1275A
Collector cutoff
2SD1275
current
2SD1275A
Emitter cutoff current
Collector to emitter 2SD1275
voltage
2SD1275A
ICBO
ICEO
IEBO
VCEO
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
1
mA
1
2
mA
2
2 mA
60
V
80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
1000
2000
10000
2.8 V
2.5 V
20 MHz
0.5 µs
4 µs
1 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SD1275.PDF ] |
Número de pieza | Descripción | Fabricantes |
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2SD1270 | Silicon PNP epitaxial planar type(For power switching) | Panasonic Semiconductor |
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