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PDF 2SC5358 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5358 | |
| Descripción | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5358
Power Amplifier Applications
2SC5358
Unit: mm
• High breakdown voltage: VCEO = 230 V
• Complementary to 2SA1986
• Suitable for use in 80-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
230
230
5
15
1.5
150
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16C1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 4.7 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC5358.PDF ] | |
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