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Número de pieza | 2SC4787 | |
Descripción | Silicon NPN epitaxial planer type(For intermediate frequency amplification) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC4787 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Transistor
2SC4787
Silicon NPN epitaxial planer type
For intermediate frequency amplification
s Features
q High transition frequency fT.
q Satisfactory linearity of forward current transfer ratio hFE.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
45
35
4
50
600
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.45+–00..015
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
s Electrical Characteristics (Ta=25˚C)
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
ICBO
VCBO
VCEO
VEBO
VCB = 20V, IE = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
0.1 µA
45 V
35 V
4V
Forward current transfer ratio
hFE
Collector to emitter saturation voltage VCE(sat)
VCE = 10V, IC = 10mA
IC = 20mA, IB = 2mA
20 50 100
0.5 V
Common emitter reverse transfer capacitance Cre
VCB = 10V, IE = –1mA, f = 10.7MHz
1.5 pF
Power gain
Transition frequency
PG
VCB = 10V, IE = –10mA, f = 58MHz
18
fT VCB = 10V, IE = –10mA, f = 100MHz 300 500
dB
MHz
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SC4787.PDF ] |
Número de pieza | Descripción | Fabricantes |
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