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PDF FC11 Data sheet ( Hoja de datos )
| Número de pieza | FC11 | |
| Descripción | Low-Frequency General-Purpose Amp/ Differential Amp Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN3154
FC11
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp,
Differential Amp Applications
Features
· Adoption of FBET process.
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC11 is formed with two chips, being equivalent
to the 2SK771, placed in one package.
· Excellent in the thermal equilibrium and pair capa-
bility and suitable for use in differential amp.
· Common source.
Package Dimensions
unit:mm
2070
[FC11]
Electrical Connection
G1:Gate1
G2:Gate2
D2:Drain2
SC:Source Common
D1:Drain1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1unit
Conditions
Ratings
40
–40
10
10
200
300
150
–55 to +150
Unit
V
V
mA
mA
mW
mW
˚C
˚C
Parameter
Symbol
Conditions
Ratings
min typ max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=10µA, VDS=0
–40 V
Gate Cutoff Current
IGSS VGS=–20V, VDS=0V
–1.0 nA
Cutoff Voltage
VGS(off) VDS=10V, ID=1µA
–0.3 –0.9 –1.8 V
Gate-to-Source Voltage Drop
∆VGS |VGS large – VGS small |, VDS=10V, ID=1mA
30 mV
Drain Current
IDSS VDS=10V, VGS=0V
1.2* 6.0* mA
Drain Current Ratio
VDS=10V, IDSS small/IDSS large
0.9
Forward Transfer Admittance
| Yfs | VDS=10V, VGS=0V, f=1kHz
4.5 9.0
mS
Forward Transfer Admittance Ratio
VDS=10V, |Yfs|small / |Yfs|large
0.9
Input Capacitacnce
Ciss VDS=10V, VGS=0V, f=1MHz
9.0 pF
Reverse Transfer Capacitance
Crss VDS=10V, VGS=0V, f=1MHz
2.1 pF
Noise Figure
NF VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz
1.5 dB
Note*:The FC11 is classified by IDSS as follows (unit:mA)
1.2 D 3.0
2.5 E 6.0
Marking:11
IDSS rank:D,E
The Specifications shown above are for each individual
transistor.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/7259TA, TS No.3154-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FC11.PDF ] | |
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